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Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy

Artikel i vetenskaplig tidskrift
Författare A. P. Jacob
Tobias Myrberg
Omer Nur
Magnus Willander
R. N. Kyutt
Publicerad i J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct.
Volym 22
Nummer/häfte 2
Sidor 565-569
ISSN 1071-1023
Publiceringsår 2004
Publicerad vid Institutionen för fysik (GU)
Sidor 565-569
Språk en
Länkar dx.doi.org/10.1116/1.1651551
Ämneskategorier Fysik

Sammanfattning

The post-growth structural stability regarding relaxation and defect propagation in Cd0.83Zn0.17Te/Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well (QW) heterostructures grown on [001] oriented Cd0.88Zn0.12Te substrates at 300 °C by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550 °C for 3 h each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350 °C for 3 h slight modification of the Cd0.83Zn0.17Te/Cd0.92Zn0.08Te barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post-growth temperature time cycle. At 450 °C, this effect is more pronounced and seen as the complete disappearance of thickness fringes. For higher post-growth thermal treatment at 550 °C for 3 h, a high relaxation level accompanied by Zn content reduction is observed. A reduction of the Zn content down to 0.11 fractional value in the thick Cd0.83Zn0.17Te barrier is attributed to Zn out diffusion and/or Zn precipitation.

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