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Sidan uppdaterades: 2012-09-11 15:12
| Författare |
D. I. Albertsson Mohammad Zahedinejad Johan Åkerman S. Rodriguez A. Rusu |
|---|---|
| Publicerad i | Ieee Transactions on Magnetics |
| Volym | 55 |
| Nummer/häfte | 10 |
| ISSN | 0018-9464 |
| Publiceringsår | 2019 |
| Publicerad vid |
Institutionen för fysik (GU) |
| Språk | en |
| Länkar |
dx.doi.org/10.1109/tmag.2019.292578... |
| Ämnesord | Compact model, magnetic tunnel junction (MTJ), spin-Hall nano oscillator (SHNO), driven, magnetoresistance, synchronization, Engineering, Physics |
| Ämneskategorier | Fysik |
Emerging spin-torque nano oscillators (STNOs) and spin-Hall nano oscillators (SHNOs) are potential candidates for microwave applications. Recent advances in three-terminal magnetic tunnel junction (MTJ)-based SHNOs opened the possibility to develop more reliable and well-controlled oscillators, thanks to individual spin Hall-driven precession excitation and read-out paths. To develop hybrid systems by integrating three-terminal SHNOs and CMOS circuits, an electrical model able to capture the analog characteristics of three-terminal SHNOs is needed. This model needs to be compatible with current electric design automation (EDA) tools. This work presents a comprehensive macrospin-based model of three-terminal SHNOs able to describe the dc operating point, frequency modulation, phase noise, and output power. Moreover, the effect of voltage-controlled magnetic anisotropy (VCMA) is included. The model shows good agreement with experimental measurements and could be used in developing hybrid three-terminal SHNO/CMOS systems.
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