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Effect of the Ion Beam Current Density on the Formation of Implanted Metal Nanoparticles in a Dielectric Matrix

Journal article
Authors A.L. Stepanov
Vladimir Popok
Published in Technical Physics Letters
Volume 29
Issue 12
Pages 977-979
Publication year 2003
Published at Department of Physics (GU)
Pages 977-979
Language en
Keywords Ion implantation, Nanoparticles, Optical reflectance and transmission, Atomic force microscopy
Subject categories Optics, Surfaces and interfaces


The effect of the ion beam current density, varied within 4–15 uA/cm2, on the formation of metal nanoparticles in a subsurface layer of SiO2 substrates implanted with 30-keV Ag ions to a dose of 5x10**16 cm–2 was studied by optical spectroscopy and atomic force microscopy techniques. An increase in the ion beam current density leads to the formation of nanoparticles of a greater size as a result of the glass substrate heating and due to an increase in the diffusion mobility of implanted silver atoms. These results suggest the possibility of controlling the dimensions of implanted nanoparticles in dielectrics by means of variation of the ion beam current density during the process.

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