To the top

Page Manager: Webmaster
Last update: 9/11/2012 3:13 PM

Tell a friend about this page
Print version

Complex crater formation … - University of Gothenburg, Sweden Till startsida
Sitemap
To content Read more about how we use cookies on gu.se

Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation

Journal article
Authors Vladimir Popok
Sergei Prasalovich
Eleanor E B Campbell
Published in Surface Science
Volume 566-568
Pages 1179-1184
Publication year 2004
Published at Department of Physics (GU)
Pages 1179-1184
Language en
Links www.sciencedirect.com/science?_ob=A...
Keywords Cluster ion implantation, surface morphology, atomic force microscopy
Subject categories Surfaces and interfaces

Abstract

Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.

Page Manager: Webmaster|Last update: 9/11/2012
Share:

The University of Gothenburg uses cookies to provide you with the best possible user experience. By continuing on this website, you approve of our use of cookies.  What are cookies?