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Application of combinatorial material chip method on the improvement of quantum dots emission efficiency

Conference paper
Authors W. Lu
Y. L. Ji
H. X. Si
S. Shen
Qingxiang Zhao
Magnus Willander
Published in Proceedings of the SPIE - The International Society for Optical Engineering
Volume 5277
Issue 1
Pages 99-108
ISSN 0277-786X
Publication year 2004
Published at Department of Physics (GU)
Pages 99-108
Language en
Links dx.doi.org/10.1117/12.529967
Subject categories Physical Sciences

Abstract

The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.

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