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Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube

Journal article
Authors H.Y. Yu
DongSu Lee
S.S. Kim
B. Kim
SangWook Lee
J.G. Park
S.H. Lee
G.C. McIntosh
YungWoo Park
Mohammad Kabir
Eleanor E B Campbell
S. Roth
Published in Applied Physics A
Volume 79
Pages 1613-1615
ISSN 0947-8396
Publication year 2004
Published at Department of Physics (GU)
Pages 1613-1615
Language en
Links dx.doi.org/10.1007/s00339-004-2906-...
Keywords carbon nanotubes
Subject categories Condensed Matter Physics

Abstract

We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

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