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Electronic transport and consequences for material removal in ultrafst pulsed laser ablation of materials

Journal article
Authors Nadya Bulgakova
Razvan Stoian
Arkadi Rosenfeld
Ingolf Hertel
Eleanor E B Campbell
Published in Physical Review B
Volume 69
Pages 054102
ISSN 1098-0121
Publication year 2004
Published at Department of Physics (GU)
Pages 054102
Language en
Keywords laser ablation
Subject categories Physical Sciences


Fast electronic transport is investigated theoretically based on a drift-diffusion approach for different classes of materials (metals, semiconductors, and dielectrics) under ultrafast, pulsed laser irradiation. The simulations are performed at intensities above the material removal threshold, characteristic for the ablation regime. The laser-induced charging of dielectric surfaces causes a subpicosecond electrostatic rupture of the superficial layers, an effect which, in comparison, is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties.

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