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CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability

Journal article
Authors Mohammad Zahedinejad
H. Mazraati
Himanshu Fulara
J. Yue
S. Jiang
Ahmad Awad
Johan Åkerman
Published in Applied Physics Letters
Volume 112
Issue 13
ISSN 0003-6951
Publication year 2018
Published at Department of Physics (GU)
Language en
Subject categories Physical Sciences, Semiconductor physics


We demonstrate low-operational-current W/Co 20 Fe 60 B 20 /MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the β-phase W (θ SH = -0.53), a very low threshold current density of 3.3 × 10 7 A/cm 2 can be achieved. Together with their very wide frequency tunability (7-28 GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.

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