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Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors

Journal article
Authors Fatjon Qejvanaj
Anders Persson
Majid Mohseni
Vahid Fallahi
Sohrab Sani
Sunjae Chung
Tuan Le
Fredrik Magnusson
Johan Åkerman
Published in IEEE Transactions on Magnetics
Volume 50
Issue 11
Pages artikel nr 4006104
ISSN 0018-9464
Publication year 2014
Published at
Pages artikel nr 4006104
Language en
Keywords Magnetism, Sensorer, Magnetoresistans
Subject categories Magnetism, Engineering physics


In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.

Page Manager: Webmaster|Last update: 9/11/2012

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