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Comprehensive and macrospin-based magnetic tunnel junction spin torque oscillator model-Part II: Verilog-A model implementation

Journal article
Authors T. Chen
A. Eklund
Ezio Iacocca
S. Rodriguez
B. G. Malm
Johan Åkerman
A. Rusu
Published in IEEE Transactions on Electron Devices
Volume 62
Issue 3
Pages 1045-1051
ISSN 0018-9383
Publication year 2015
Published at Department of Physics (GU)
Pages 1045-1051
Language en
Keywords Analytical model, macrospin, magnetic tunnel junction (MTJ), spin torque oscillator (STO)
Subject categories Physical Sciences


The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various applications. In Part I of this paper, an analytical model based on the macrospin approximation has been introduced and verified by comparing it with the measurements of three different MTJ STOs. In Part II, the full Verilog-A implementation of the proposed model is presented. To achieve a reliable model, an approach to reproducing the phase noise generated by the MTJ STO has been proposed and successfully employed. The implemented model yields a time domain signal, which retains the characteristics of operating frequency, linewidth, oscillation amplitude, and DC operating point, with respect to the magnetic field and applied DC current. The Verilog-A implementation is verified against the analytical model, providing equivalent device characteristics for the full range of biasing conditions. Furthermore, a system that includes an MTJ STO and CMOS RF circuits is simulated to validate the proposed model for system- and circuit-level designs. The simulation results demonstrate that the proposed model opens the possibility to explore STO technology in a wide range of applications.

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