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Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C-60(2+) as primary and sputter ions

Journal article
Authors Josefin Hall
U. Bexell
John S. Fletcher
Sead Canovic
Per Malmberg
Published in Materials at High Temperatures
Volume 32
Issue 1-2
Pages 133-141
ISSN 0960-3409
Publication year 2015
Published at Department of Chemistry and Molecular Biology
Pages 133-141
Language en
Keywords Secondary ion mass spectrometry, Oxide scale, Depth profiling, Solid oxide fuel cell
Subject categories Materials Engineering, Chemical Engineering


Oxide scale cross-sections of CeO2 coated FeCr based solid oxide fuel cell interconnect materials were examined using secondary ion mass spectrometry (SIMS) depth profiling. A duplex spinel : chromia scale was formed after 1 h at 850 degrees C. Ti and ceria were observed between these layers. Additionally, minor concentrations of Mn, Si and Nb were observed at the oxide/ metal interface. Furthermore, Al and Ti were concentrated primarily in the metal surface close to the oxide/metal interface. Secondary ion mass spectrometry sputter depth profiles using different ion sources; Ga-69(+), Bi-3(+)/Cs+ and C-60(+)/C(60)(2+)were compared with TEM oxide scale cross-section and field emission gun-Auger electron spectroscopy depth profiling. Secondary ion mass spectrometry depth profiling with Ga-69(+), Bi(3)z/Cs+ showed decreased secondary ion yields in the metallic matrix. This decrease could be avoided using oxygen flooding. The C-60 cluster ion depth profiles were less sensitive to type of matrix and gave the best correspondence to the TEM cross-section. However, the impact energy has to be high enough to avoid carbon deposition.

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