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Nanostructured MnGa Films on Si/SiO2 with 20.5 kOe Room Temperature Coercivity

Journal article
Authors Chaolin Zha
Randy K. Dumas
J. W. Lau
Seyed Majid Mohseni
Sohrab Redjai Sani
I. V. Golosovsky
Å. F. Monsen
Josoe Nogués
Johan Åkerman
Published in Journal of Applied Physics
Volume 110
Issue 9
ISSN 0021-8979
Publication year 2011
Published at Department of Physics (GU)
Language en
Keywords magnetism, spintronics, MnGa
Subject categories Magnetism


Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (H-C = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest H-C. The large H-C is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656457]

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