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Pseudo spin valves based on L1_0 (111)-oriented FePt and FePtCu fixed layer with tilted anisotropy

Journal article
Authors C.-L. Zha
Johan Åkerman
Published in Journal of Physics: Conference Series
Volume 200
Pages 052036 (4 pages)
ISSN 1742-6596
Publication year 2010
Published at Department of Physics (GU)
Pages 052036 (4 pages)
Language en
Keywords spinntronik, magnetism
Subject categories Magnetism, Electronics


We demonstrate a series of pseudo-spin-valve structures based on L10 (111)- oriented FePt and FePtCu with titled magnetocrystalline anisotropy. Highly ordered (111)- oriented L10 FePtCu with large anisotropy is achieved by optimizing the Cu content. Magnetoresistance (MR) up to 5% has been obtained by i) optimizing the ¯xed-layer growth using di®erent underlayers, ii) enhancing the interface spin polarization using thin CoFe at the Cu interfaces, and iii) adjusting the Cu spacer thickness. The substantial MR realized with tilted ¯xed layer magnetization is an important prerequisite for the realization of tilted polarizer Spin Torque Oscillators (STO) or Spin-Transfer Torque Magnetoresistive Random Access Memories (STT-MRAM).

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