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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films

Journal article
Authors J Luo
Z Qiu
C.-L. Zha
Z. Zhang
D Wu
J Lu
Johan Åkerman
M. Östling
L. Hultman
S.-L. Zhang
Published in Applied Physics Letters
Volume 96
Issue 3
Pages 031911 (3 pages)
ISSN 0003-6951
Publication year 2010
Published at Department of Physics (GU)
Pages 031911 (3 pages)
Language en
Subject categories Physical Sciences, Semiconductor physics, Electronics


The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x = 0) and for tNi<4 nm, epitaxially aligned NiSi2−y films readily grow and exhibit extraordinary morphological stability up to 800 °C. For tNi ≥ 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x = 1) and for tPt = 1–20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1−xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.

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