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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films

Journal article
Authors J Luo
Z Qiu
C.-L. Zha
Z. Zhang
D Wu
J Lu
Johan Åkerman
M. Östling
L. Hultman
S.-L. Zhang
Published in Applied Physics Letters
Volume 96
Issue 3
Pages 031911 (3 pages)
ISSN 0003-6951
Publication year 2010
Published at Department of Physics (GU)
Pages 031911 (3 pages)
Language en
Links link.aip.org/link/?APPLAB/96/031911...
Subject categories Physical Sciences, Semiconductor physics, Electronics

Abstract

The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x = 0) and for tNi<4 nm, epitaxially aligned NiSi2−y films readily grow and exhibit extraordinary morphological stability up to 800 °C. For tNi ≥ 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x = 1) and for tPt = 1–20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1−xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.

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