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Effects of Different Lead Magnetizations on the Datta-Das Spin Field-Effect Transistor

Journal article
Authors A. Aharony
O. Entin-Wohlman
K. Sarkar
Robert I. Shekhter
Mats Jonson
Published in Journal of Physical Chemistry C
Volume 123
Issue 17
Pages 11094-11100
ISSN 1932-7447
Publication year 2019
Published at Department of Physics (GU)
Pages 11094-11100
Language en
Links dx.doi.org/10.1021/acs.jpcc.9b00847
Keywords spintronics
Subject categories Condensed Matter Physics, Physical Chemistry

Abstract

A Datta-Das spin field-effect transistor is built of a one-dimensional weak link, with Rashba spin-orbit interactions (SOIs), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated to lowest order in the tunneling through the weak link and in the wide-band approximation, with emphasis on their dependence on the origins of the "bare" magnetizations in the reservoirs. The SOI is found to generate magnetization components in each reservoir, which rotate in the plane of the electric field (generating the SOI) and the weak link, only if the "bare" magnetization of the other reservoir has a nonzero component in that plane. The SOI affects the charge current only if both reservoirs are polarized. The charge current is conserved, but the transverse rotating magnetization current is not conserved because the SOI in the weak link generates extra spin polarizations which are injected into the reservoirs.

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