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A highly tunable microwave oscillator based on MTJ STO technology

Journal article
Authors T. Chen
Philipp Dürrenfeld
S. Rodriguez
Johan Åkerman
A. Rusu
Published in Microwave and Optical Technology Letters
Volume 56
Issue 9
Pages 2092-2095
ISSN 0895-2477
Publication year 2014
Published at Department of Physics (GU)
Pages 2092-2095
Language en
Keywords spin torque oscillator, CMOS, microwave, wideband, highly tunable
Subject categories Optics


This article presents a fully ESD-protected, highly tunable microwave oscillator based on magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology. The oscillator consists of a compact MTJ STO and a 65 nm CMOS wideband amplifier, which amplifies the RF signal of the MTJ STO to a level that can be used to drive a PLL. The (MTJ STO+amplifier IC) pair shows a measured quality factor (Q) of 170 and a wide tunability range from 3 to 7 GHz, which demonstrate its potential to be used as a microwave oscillator in multiband, multistandard radios. (C) 2014 Wiley Periodicals, Inc.

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