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Quantum shuttle phenomena in a nanoelectromechanical single-electron transistor

Journal article
Authors Dmytro Fedorets
Leonid Y. Gorelik
Robert I. Shekhter
Mats Jonson
Published in Physical Review Letters
Volume 92
Pages 166801
ISSN 0031-9007
Publication year 2004
Published at Department of Physics (GU)
Pages 166801
Language en
Subject categories Physical Sciences, Mesoscopic physics


An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunneling length is much greater than the amplitude of the zero point oscillations of the central island. It is shown that when the dissipation is below a certain threshold value, the vibrational ground state of the central island is unstable. The steady state into which this instability develops is studied. It is found that if the electric field E between the leads is much greater than a characteristic value E-q, the quasiclassical shuttle picture is recovered, while if E0) shuttle vibrations.

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