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Metal-assisted chemical etching for realisation of deep silicon microstructures

Journal article
Authors S. Zarei
Mohammad Zahedinejad
S. Mohajerzadeh
Published in Micro & Nano Letters
Volume 14
Issue 10
Pages 1083-1086
Publication year 2019
Published at Department of Physics (GU)
Pages 1083-1086
Language en
Links dx.doi.org/10.1049/mnl.2019.0113
Keywords gold, silicon, elemental semiconductors, etching, Si, etching parameters, dry etching, micrometre-, high-aspect-ratio, arrays, filter
Subject categories Physical Sciences

Abstract

Metal-assisted chemical etching process is exploited to realise deep-etched silicon structures. Gold as the noble metal, hydrogen peroxide and hydrofluoric acid solutions are used to achieve deep vertical structures. By controlling the solution concentrations, thickness and morphology of the deposited metal, several hundred micrometre-sized silicon structures can be achieved. This method, upon achieving more controllability and repeatability, can be a good substitute for dry etching, due to its high etch-rate, low-cost materials and non-requirement to complex equipment. In this work, the effect of different etching parameters on the etching process is studied to gain more control over the etching conditions.

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