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Strong electron-phonon coupling in the σ band of graphene

Journal article
Authors Frederico Mazzola
Thomas Frederiksen
Thiagarajan Balasubramanian
Philip Hofmann
Bo Hellsing
Justin Wells
Published in Physical Review B Condensed Matter
Volume 95
Issue 7
ISSN 0163-1829
Publication year 2017
Published at Department of Physics (GU)
Language en
Links dx.doi.org/10.1103/PhysRevB.95.0754...
fy.chalmers.se/~hellsing/publicatio...
Keywords graphene, electron-phonon coupling, band structure
Subject categories Electronic structure

Abstract

First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the σ band with λ values of up to 0.9. Near the top of the σ band, λ is found to be ≈ 0.7. This value is consistent with the recently observed kinks in the σ band dispersion by angle-resolved photoemission. While the photoemission intensity from the σ band is strongly influenced by matrix elements due to sublattice interference, these effects differ significantly for data taken in the first and neighboring Brillouin zones. This can be exploited to disentangle the influence of matrix elements and electron-phonon coupling. A rigorous analysis of the experimentally determined complex self-energy using Kramers-Kronig transformations further supports the assignment of the observed kinks to strong electron-phonon coupling and yields a coupling constant of 0.6(1), in excellent agreement with the calculations.

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