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Production of nano-holes patten on Si(111) by colloidal lithography for growth of InAs nanowires

Conference paper
Authors Elham Fadaly
Ines Massiot
Mahdad Sadeghi
Alexandre Dmitriev
Huan Zhao
Published in 15th International Conference on Nanotechnology
Publication year 2015
Published at
Language en
Keywords Nanomaterials; semiconductors; colloidal lithography; InAs nanowires; MBE; selective area epitaxy
Subject categories Electrical Engineering, Electronic Engineering, Information Engineering, Nano Technology

Abstract

Colloidal lithography is a simple, versatile and low-cost technique that can be used to pattern diverse nanostructures on a wafer scale. In this work, colloidal lithography utilizing polystyrene nanoparticles as a lift-off mask was used to produce nanohole patterns on Si (111) substrates. The hole size, which is determined by the size of the polystyrene particles, can be well controlled by oxygen plasma shrinking. Using this technique, we were able to obtain nanohole pattern with feature size down to 50 nm, which is close to the limit that conventional lithographic techniques can reach, in a time-efficient and cost effective manner. InAs nanowires were successfully grown on the patterned substrates using molecular beam epitaxy.

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